DC Current Gain - hFE= 20 – 70 IC= 4 Adc 2. Web2N3055 (NPN) MJ2955 (PNP) designed for general–purpose switching and amplifier applications. WebComplementary power transistors, 2N3055 Datasheet, 2N3055 circuit, 2N3055 data sheet : STMICROELECTRONICS, alldatasheet, Datasheet, Datasheet search site for Electronic … pluk de dag betekenis It is a transistor type of enduring popularity.ĢN3055 Datasheet(PDF) - STMicroelectronics Its numbering follows the JEDEC standard.

It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. The 2N3055 is a silicon NPN power transistor intended for general purpose applications. Is that normal? Specs mention hFE 70 max. Strangely, all four have exactly the same very high hFE of 221. The four Motorola(?) 2N3055 have actually survived.WebDriving Directions to Tulsa, OK including road conditions, live traffic updates, and reviews of local businesses along the way.

2N3055G Description: Bipolar Transistors - BJT NPN 15A 60V Compare With Current Part FEATURED PRODUCTS ONSEMI No Image NST650 Dual-Matched PNP … pluk fruit basket.

Last edited: J Thread Starter JRM1 Joined 18 Aug 30, … If you used TIP120 transistors instead, you could drive them directly from TTL. In order to get the transistor pretty well saturated with an Ic of 2.5A, you will need to supply the base with around 80mA, or an hFE of around 30. Help with 2N3055 Transistor All About Circuits

The problem with the 2N3055 is that it is such an old device (historically) that you find the offerings available today are somewhat different spec wise.Find many great new & used options and get the best deals for 2N3055 Power Transistor Si Npn 15A 70V 115W Siemens (TO3) #14-37 at the best online prices at eBay! Free shipping for many products! pluk bekker.The device is designed for general purpose switching and amplifier applications.2N3055 Power Transistor Si Npn 15A 70V 115W Siemens (TO3) … 2N3055 NPN Power Transistor – TO-3 Metal PackageĢN3055 is a general purpose NPN power transistor manufactured with the epitaxial base process, mounted in a hermetically sealed metal case.

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